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Molibdênio Disco
Molibdênio Discos are widely used as contact Materiais in silicon controlled rectifiers diodes, transistors and thyristors (GTO’S). Other than in specialist Aplica??es, Molibdênio is now accepted as the first choice mounting material for power semiconductor devices due to its significantly lower cost and weight.The fact that both Materiais have a similar coefficient of expansion to silicon combined with high thermal conductivity makes them an ideal choice, especially in large area power devices where considerable heat is genetaxad. Further Aplica??es include the use of Molibdênio as heat sink bases in IC’S, LSI’S and hybrid circuits. Reference Padr?os
GB/T3876-83, GB/T14592-93, QJ/BHZ02.68-89
| Fe | Ni | Al | Si | Ca | Mg | P | C | O | N |
| 0.006 | 0.003 | 0.002 | 0.003 | 0.002 | 0.002 | 0.001 | 0.010 | 0.006 | 0.003 |
| PRODUCTION METHOD | THICKNESS | DIAMETER | ||
| mm | inch | mm | inch | |
| PUNCH | 0.1 - 0.3 | 0.004 - 0.012 | 1.0 - 50.0 | 0.040 - 2.0 |
| 0.31 - 0.5 | 0.012 - 0.020 | 1.0 - 50.0 | 0.040 - 2.0 | |
| 0.51 - 1.0 | 0.020 - 0.040 | 2.0 - 80.0 | 0.080 - 3.2 | |
| 1.1 - 2.0 | 0.040 - 0.080 | 10.0 - 130.0 | 0.40 - 5.2 | |
| 2.1 - 3.0 | 0.080 - 0.120 | 20.0 - 130.0 | 0.80 - 5.2 | |
| 3.1 - 4.0 | 0.120 - 0.160 | 40.0 - 100.0 | 1.60 - 4.0 | |
| 4.1 - 6.0 | 0.160 - 0.240 | 50.0 - 90.0 | 2.0 - 3.6 | |
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